利用电学测量方法 ,给出了在集成电路制造过程中 ,影响光刻工艺的各种颗粒尘埃 (缺陷 )的粒径分布参数提取方法 .首先基于双桥微电子测试结构 ,通过具体制造工艺得到数据 ,然后处理得到故障的粒径分布 .再利用缺陷与故障之间的关系 ,进一步推导出缺陷粒径分布的参数 .结果表明该方法适合于不同的缺陷粒径分布模型 ,而且得到的参数可以用于集成电路成品率预测 The method of electrical measurement was used to extract the particle size distribution parameters of various particle dusts (defects) that affect the lithography process in the process of manufacturing integrated circuits.Firstly, based on the double bridge microelectronic test structure, the data were obtained through the specific manufacturing process , And then get the particle size distribution of the fault.And then use the relationship between the defect and the fault to further derive the parameter of the particle size distribution.The results show that the method is suitable for different particle size distribution model and the parameters can be used Integrated circuit yield forecast