宽禁带GaN半导体器件以其优异的电学和光学特性,已成为目前半导体领域中的研究热点。以高质量GaN体单晶基片为衬底的同质外延生长,是发挥GaN半导体器件优异性能的关键。高质量GaN单晶基片的缺乏已成为当前制约GaN器件发展的瓶颈。本文从影响LED器件设计与制造的关键因素(衬底)分析,综述了近年来几种常见GaN体单晶生长方法,并对它们的发展前景做出了展望。 Wide band-gap GaN semiconductor devices have become the research hotspot in the semiconductor field due to their excellent electrical and optical properties. The homoepitaxial growth with high-quality GaN bulk single crystal substrates is the key to the excellent performance of GaN semiconductor devices. The lack of high-quality GaN single crystal substrate has become the bottleneck restricting the development of GaN devices. In this paper, we analyze the key factors (substrate) that affect the design and manufacture of LED devices, and review some common GaN single crystal growth methods in recent years. Finally, the prospects of their development are also prospected.