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We study a silicon-based Pb TiO3/Pb(Zro.53 Tio.47)O3/Pb TiO3 capacitor, prepared by an improved sol-gel method.The ferroelectric capacitor has a high remanent polarization of 15 pC/crm2 at a coercive field of about 30 k V/cm,an ultra-low leakage current density of 0.1 hA/crm2, and almost fatigue free properties. It can be used as a promising candidate for ferroelectric memory devices.