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本文由形变势理论研究了应变对超晶格（ＣｄＴｅ）＿ｎ／（ＺｎＴｅ）＿ｍＴ点带边的影响计算了带偏移。在有效质量近似下，计算了对称的双量子阱中的亚带结构随阱宽与垒宽的变化规律及电子和空穴的几率密度分布。
In this paper, the influence of strain on the band edge of superlattice (CdTe) _n / (ZnTe) _mT is studied by the theory of deformation potential. The band offset is calculated. Under effective mass approximation, the rule of subband structure in symmetric double quantum well with well width and base width and the probability density distribution of electrons and holes are calculated.