本文介绍了一种采用硅各向异性腐蚀制作互补器件的新工艺。各向异性腐蚀是在(100)晶向片子上进行的,对应于整个器件的大面积腐蚀深度只有几个微米。对腐蚀工艺进行了讨论和最佳化。这种基本结构应用于研制硅栅互补 MOS 晶体管的两种新方法。本文还叙述了高压 P 沟 MOS 晶体管与低压高密度 C-MOS 的相容性,并讨论了这种工艺的优点。 This article describes a new process for making complementary devices using anisotropic anisotropic silicon. Anisotropic etching is performed on the (100) crystal to the wafer, corresponding to a few microns of extensive corrosion over the entire device. Corrosion process was discussed and optimized. This basic structure is used to develop two new methods of Si gate complementary MOS transistors. This article also describes the compatibility of high-voltage P-channel MOS transistors with low-voltage high-density C-MOS and discusses the advantages of this process.