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在基于磁性隧道结(Magnetic Tunneling Junction,MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory,MRAM)中利用通过MTJ的垂直电流,实现信息写入的新方法,同时给出了基于此新方法的一种新的MRAM结构和驱动原理图,并分析了它的读和写操作的可行性具体过程.
A new method of writing information is implemented by using a vertical current through the MTJ in a Magnetic Tunneling Junction (MTJ) -based magnetic random access memory (MRAM), and a method based on this new method New MRAM structure and driving principle diagram, and analyzes the feasibility of its read and write operations specific process.