在低频大功率晶体管的制造中,采用的传统工艺是扩铝-硼形成基区,这种工艺较为成熟、稳定.随着对低频大功率晶体管耐压要求的提高,国外的生产经验,多采用扩镓工艺来达到高耐压的要求.我们在DD03、15晶体管的制造中,试采用扩镓工艺,基本达到了耐压较高的要求,但小电流放大系数严重减少,直接影响着用户的使用.为此,根据国外 In the manufacture of low-frequency high-power transistors, the traditional process is expanded aluminum - boron base area, this process is more mature and stable. With the low-frequency high-power transistors to withstand voltage requirements increase, foreign production experience, and more use Expand the gallium process to achieve high voltage requirements.We DD03, 15 transistor manufacturing, the trial use of gallium expansion process, the basic meet the higher voltage requirements, but the serious reduction of small current amplification factor, a direct impact on the user’s For this purpose, according to foreign countries