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讨论了引入Ⅲ Ⅴ族氮化物为蓝宝石与碳化硅中间的缓冲层 ,用常压气相外延手段在蓝宝石 /Ⅲ Ⅴ族氮化物复合衬底上异质外延碳化硅薄膜的过程 .在C面 (0 0 0 1)蓝宝石上成功地生长出SiC薄膜 .扫描电子显微镜显示薄膜表面连续、光滑 ,证明良好的氮化物缓冲层对碳化硅薄膜异质生长具有重要的意义 ,同时在表面发现直径为 1～ 10 μm的六角形缺陷 .对缺陷面密度与工艺参数的关系进行了分析 ,并对缺陷产生的机理进行了探讨 ,认为反应产生物的腐蚀是产生六角形缺陷的来源 .
The process of introducing heterogeneous epitaxial silicon carbide thin film on the sapphire / III-V nitride composite substrate by using III V nitride as the buffer layer between the sapphire and the silicon carbide is described. 0 0 1) The SiC film was successfully grown on sapphire. The scanning electron microscopy showed that the surface of the film was continuous and smooth, which proved that the good nitride buffer layer had an important significance on the heterogeneous growth of silicon carbide film. Meanwhile, 10 μm hexagonal defects.The relationship between defect surface density and process parameters was analyzed and the mechanism of defects was discussed.The corrosion of reaction products was the source of hexagonal defects.