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在ICSCRM2007(2007SiC及其相关材料国际会议)上,众多与会者异口同声地赞叹SiC衬底厂商巨头美国Cree发布的新成果。Cree已开始供应无微管(中空贯通缺陷)的直径为100mm的SiC衬底。由于元件厂商的大部分生产线支持直径100mm以上的晶圆,所以直径100mm以上的高品质SiC衬底备受期待。
ICSCRM2007 (2007SiC and related materials International Conference), many participants unanimously praised SiC substrate manufacturer Cree released the United States new achievements. Cree has begun to supply SiC substrates with 100mm diameter microtubes (hollow through defects). Since most component manufacturers support wafers with a diameter of 100 mm or more, a high-quality SiC substrate with a diameter of 100 mm or more is highly desired.