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研究了阳极层离子源预处理工艺对WC硬质合金基底表面粗糙度Ra和表面最大峰谷值Pv的影响,以及对后续镀制Ta缓冲涂层表面特征及膜基附着力的影响。结果表明,硬质合金基片表面粗糙度和表面最大峰谷值的增加量随基片偏压升高呈指数增加;而离子源电压对基片表面粗糙度和表面最大峰谷值影响较弱;采用离子源电压1350 V,基片偏压200 V轰击硬质合金基片15 min后镀制Ta膜,膜层表面晶粒细小均匀,表面致密性显著增加;此外,基片表面经离子源处理后,镀制的Ta缓冲层与基底的膜基结合力有较大改善,这将有利于提高后续贵金属保护涂层的附着力及抗元素扩散能力。
The effect of anode layer ion source pretreatment process on the surface roughness Ra and surface maximum valleys Pv of WC cemented carbide as well as the surface characteristics and film adhesion of the subsequent Ta plating were studied. The results show that the increase of the surface roughness and the maximum peak-to-valley value of the cemented carbide substrate increases exponentially with the increase of the substrate bias voltage. However, the effect of the ion source voltage on the substrate surface roughness and the surface maximum peak-valley value is weaker ; The ion source voltage of 1350 V, substrate bias 200 V bombardment cemented carbide substrate 15 min after plating Ta film, the film surface of the crystal fine uniform, the surface density increased significantly; In addition, the substrate surface by the ion source After treatment, the coated Ta buffer layer and the base film base bonding strength has greatly improved, which will help improve the follow-up of the precious metal protective coating adhesion and anti-element diffusion ability.