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对非晶硅薄膜晶体管,提出基于陷落电荷和自由电荷分析的新方法。考虑到带隙中指数分布的深能态和带尾态,给出了基于阈值电压的开启区电流模型。定义阈值电压为栅氧/半导体界面处陷落于深能级陷阱态的电荷与陷落于带尾态的电荷相等时所对应的栅压。电流模型中,引入一陷落电荷参数β,此参数建立了电子的带迁移率与有效迁移率之间的关系。最后,将电流模型同时与Pao-Sah模型和实验数据进行比较和验证,结果表现出很好的一致性。
For amorphous silicon thin film transistors, a new method based on falling charge and free charge analysis is proposed. Taking into account the exponential distribution of the deep-band and band-tail states in the bandgap, an open-region current model based on the threshold voltage is given. The threshold voltage is defined as the gate voltage corresponding to the trapped charge in the deep level trap state at the gate oxide / semiconductor interface equal to the charge trapped in the tailed state. In the current model, a falling charge parameter β is introduced, which establishes the relationship between the electron mobility and the effective mobility. Finally, the current model is compared with the Pao-Sah model and the experimental data at the same time, and the results show good consistency.