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在550℃下的H2S气氛中退火处理电沉积制备的Cu(In,Ga)Se2(CIGS)预置层,制备了太阳电池光吸收层Cu(In,Ga)(Se,S)2(CIGSS)薄膜.采用X射线能量色散谱、俄歇电子能谱、扫描电镜、X射线衍射和拉曼光谱对退火前后的薄膜进行表征.结果表明,H2S气氛下退火能够实现薄膜中O的去除和S的掺入,同时使得各元素的纵向分布更加均匀并可消除Cu-Se微相.此外,H2S退火还可改善薄膜的结晶性能,并使S和Ga进入黄铜矿结构,薄膜晶格参数变小.
(In, Ga) (Se, S) 2 (CIGSS) was prepared by annealing the preplated Cu (In, Ga) Se2 (CIGS) electrodeposited in H2S at 550 ℃. The films were characterized by X-ray energy dispersive spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.The results show that annealing in H2S atmosphere can achieve the removal of O and S In addition, H2S annealing can also improve the crystalline properties of the films, and make S and Ga into the chalcopyrite structure, the thin film lattice parameters become smaller .