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在室温下通过外加电场极化法 ,首次用较低的极化开关电场～ 5 .5kV/mm ,在厚为 1mm、长为 2 0mm、宽为 18mm的掺镁铌酸锂基片上成功的制备了周期为 4 .8～ 5 .2 μm的一阶准相位匹配倍频光学微结构 ;并在室温下 ,以波长为 980nm的半导体激光器为基频光源 ,对所研制的微结构样品进行倍频通光实验 ,在入射基频光为 80 0mW时 ,产生约 4 0mW的 4 90nm的倍频光 ,其对应转换效率为 5 % ,实验过程中未见绿致吸收光折变现象
By external electric field polarization method at room temperature for the first time with a lower polarization switching electric field of ~ 5.5kV / mm, the thickness of 1mm, length 20mm, width 18mm magnesium-doped lithium niobate substrate successfully prepared The first-order quasi-phase-matching frequency-doubling optical microstructure with period of 4.8 ~ 5.2 μm was fabricated. The semiconductor laser with the wavelength of 980 nm was used as the fundamental light source at room temperature, and the microstructured samples were frequency doubled In the experiment of passing light, when the incident fundamental frequency light is 80 0mW, it produces 4 90nm doubling light with about 4 0mW, the corresponding conversion efficiency is 5%, and no phenomenon of green induced absorption of light is observed during the experiment