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本文研讨了不同类型的超结器件实现低于250V击穿电压的可扩展性。以额定击穿电压为80V的超结功率MOSFET为例,研究了器件几何构造和结构对其品质因数的影响。同时提出了对超结效应的全新电场理论阐释,并使用超结器件交错漂移区中的横向场分布情况予以证实。此外,文章还简要讨论了超结器件的边缘端接。在过去10年中,建立在超结概念基础上的
This article discusses the scalability of different types of superjunction devices to achieve breakdown voltages below 250V. Taking a super-junction power MOSFET with a rated breakdown voltage of 80V as an example, the influence of device geometrical structure and structure on its quality factor is studied. At the same time, a new theory of electric field of super-junction effect is proposed, and the distribution of transverse field in the staggered drift region of super-junction device is verified. In addition, the article briefly discusses the edge termination of super-junction devices. In the past 10 years, based on the concept of super-junction