采用弹道电子发射显微术 ( BEEM)技术对超薄 Pt Si/Si、Co Si2 /Si肖特基接触特性进行了研究 ,并与电流 -电压 ( I- V)及电容 -电压 ( C- V)测试结果进行了对比 .研究了 Ar离子轰击对超薄Pt Si/n- Si肖特基接触特性的影响 .BEEM、I- V/C- V技术对多种样品的研究结果表明 ,I- V/C- V测试会由于超薄硅化物层串联电阻的影响而使测试结果产生严重误差 ;BEEM测试则不受影响 .随着离子轰击能量增大 ,肖特基势垒高度降低 ,且其不均匀性也越大 .用 BEEM和变温 I- V对超薄 Co Si2 /n- Si肖特基二极管的研究结果表明 ,变温 I- V测试可在一定程度上获得肖特基势垒在整个界面上的不均匀性信息 ,但它依赖于假设的势垒高度分布模型 ;BEEM测试则可直接获得金 -半接触界面的肖特基势垒高度 ,近似为高斯分布 The Schottky contact characteristics of ultra-thin Pt Si / Si and Co Si2 / Si films were studied by using ballistic electron emission microscopy (BEEM). The contact characteristics of the Schottky contacts with the current-voltage (I- ) Test results were compared.The effect of Ar ion bombardment on the contact characteristics of ultra-thin Pt Si / n- Si Schottky has been investigated.The results of the BEMEM and I-V / C-V techniques on a variety of samples show that the I- The V / C-V test results in a serious error in the test results due to the series resistance of the ultra-thin silicide layer; the BEEM test is unaffected. As the ion bombardment energy increases, the Schottky barrier height decreases, The more inhomogeneity.With BEEM and variable temperature I-V on the ultra-thin Co Si2 / n-Si Schottky diode results show that the variable temperature I-V test to some extent Schottky barrier in the whole But it relies on the assumed barrier height distribution model; the BEEM test can directly obtain the Schottky barrier height of the gold-semi-contact interface, which is approximately Gaussian distribution