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Flash ROM芯片的存储阵列和外围电路均具有较高的辐射易损性,辐射损伤模式多样。为对其辐射敏感电路进行定位和分析,本文采用X射线微束开展局部辐照试验研究。分别研究了存储阵列,译码电路以及电荷泵等不同电路模块所引起的失效表征,利用错误位的逻辑地址映射图,总结错误分布规律,结合相应电路结构对其失效机理进行分析。辐照存储阵列会导致规则分布的0→1翻转错误,而译码电路出错会导致1→0的错误,电荷泵电路退化则会导致器件擦除和写入功能的失效。微束辐照结果可以有效补充全芯片总剂量效应考核的不足,为器件的抗辐射加固提供有益的参考。
Flash ROM chip storage arrays and peripheral circuits have high radiation vulnerability, radiation damage patterns and diverse. In order to locate and analyze its radiation sensitive circuit, this paper uses X-ray microbeam to carry out the local irradiation experiment. The failure characterization caused by different circuit modules, such as memory array, decoding circuit and charge pump, is studied respectively. The logical address map of error bits is used to summarize the error distribution rules. The failure mechanism is analyzed with the corresponding circuit structure. Irradiated storage arrays can result in a 0 → 1 rollover of the regular distribution, with errors in the decoding circuitry leading to 1 → 0 errors, and degradation of the charge pump circuitry can lead to device erasure and write failure. The results of micro-beam irradiation can effectively supplement the lack of assessment of the total dose effect of the whole chip, and provide a useful reference for the anti-radiation reinforcement of the device.