利用252Cf源和60Coγ射线源对典型VDMOSFET进行单粒子效应和电离总剂量效应模拟试验,给出典型VDMOSFET的单粒子烧毁(SEB)、单粒子栅穿(SEGR)效应测量结果以及不同偏置条件下漏源击穿电压随辐照剂量的变化情况。结果表明,VDMOSFET对SEB和SEGR效应以及VDMOSFET漏源击穿电压对电离总剂量效应比较敏感,空间应用时需重点考虑VDMOSFET的抗SEB和SEGR能力;考核VDMOSFET的抗电离总剂量效应能力时对阈值电压和击穿电压等敏感参数应重点关注。 Single-atom effect and ionization total dose effect simulation of typical VDMOSFETs were performed using 252Cf source and 60Coγ-ray source. Single-event burnout (SEB), single-particle gate-on effect (SEGR) Drain source breakdown voltage changes with irradiation dose. The results show that VDMOSFET is sensitive to the SEB and SEGR effect and the leakage voltage breakdown voltage of VDMOSFET is more sensitive to the total dose effect of ionization. Therefore, the VDMOSFET’s resistance to SEB and SEGR should be considered in space application. Sensitive parameters such as voltage and breakdown voltage should focus on.