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本文简述了干法腐蚀的现状、原理及其反应装置.给出了在圆筒型反应器中氮化硅薄膜的均匀刻蚀以及硅表面的平滑抛光的工艺条件,同时,也给出了在此工艺条件下,单晶硅、氮化硅、热生长二氧化硅、砷化镓以及光致抗蚀剂的腐蚀速率.对硅表面在高频场和等离子体轰击下表面性质的改变作了初步研究.并通过此工艺在制管中的成功应用,可看到它在降低成本,减少公害,以及进行微细加工方面所显示出来的优越性.目前,对实验结果和现象的分析尚处于定性的阶段.
In this paper, the current situation, principle and reaction apparatus of dry etching are briefly introduced.The process conditions of uniform etching of silicon nitride film and smooth polishing of silicon surface in cylindrical reactor are given, meanwhile, Under the conditions of this process, single crystal silicon, silicon nitride, thermal growth of silicon dioxide, gallium arsenide and photoresist corrosion rate on the silicon surface in the high-frequency plasma and plasma bombardment under the surface properties change The preliminary study, and through the successful application of this technology in pipe making, shows the advantages it shows in reducing costs, reducing pollution and performing microfabrication.At present, the analysis of experimental results and phenomena is still in Qualitative stage.