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在国产分子束外延设备的基础上 ,利用新型阀控裂解 As源炉 ,对 As2 和 As4 的生长特性进行了全面的研究 .以 As2 和 As4 两种模式 ,在 (0 0 1) In P衬底上生长了高质量的 In As P体材料和 In Asy P1 - y/ In P多量子阱样品 .材料质量用 X射线衍射 (XRD)以及室温和低温的光致发光 (PL)测定 .实验发现 ,两种模式生长的样品的晶体结构质量相当 ,但 As2 的吸附系数明显大于 As4 的吸附系数 .另外 ,用 As2 模式生长的多量子阱样品的室温光学特性优于As4 模式生长的样品 ,但在低温时 ,二者几乎相同 ,这是由 As4 较为复杂的生长机制所引入的缺陷造成的
Based on the domestic molecular beam epitaxy equipment, the growth characteristics of As2 and As4 were comprehensively studied by using new valve-controlled pyrolysis As source furnace.The As2 and As4 substrates were grown on (0 0 1) In P substrate High quality In As P bulk materials and In Asy P1 - y / In P multiquantum well samples were grown.The XRD patterns and photoluminescence (PL) measurements at room temperature and low temperature of the materials were carried out.It was found that, However, the adsorption coefficient of As2 is obviously larger than the adsorption coefficient of As4. In addition, the multi-quantum well grown in As2 mode has better optical properties at room temperature than the As4 mode. However, , They are almost the same, due to defects introduced by the more complex As4 growth mechanism