一、引言为解决一般RIE设备中的产量问题,渴望在VLSI生产中能出现一种高速率工艺。腐蚀速率低是由于和射频功率相联的平行平板之间所产生的辉光放电离化效率低达10~(-4)所致,因此人们在改善高化效率方面作了很多努力。一种紧凑的高效率单片腐蚀机已经问世,并可与生产上得到大量采用的成批生产的腐蚀机相比美。此外,一种通过改善辉光放电离化率的热灯丝三极管方法也已有报导。 I. INTRODUCTION In order to solve the problem of yield in general RIE equipment, there is a desire to have a high-rate process in VLSI production. The low corrosion rate is due to the glow discharge ionization efficiency of as low as 10 ~ (-4) generated between the parallel plates associated with the RF power. Therefore, many efforts have been made to improve the high efficiency. A compact, high-efficiency monolithic corrosion machine has been introduced and is comparable to mass-produced ergonomics that are widely used in production. In addition, a hot filament triode method that improves the glow discharge ionization rate has also been reported.