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为了充分发挥IGBT5所具有的高结温特点,新一代Prime PACKTM3+封装结合最新的.XT技术和新的设计方法,在保持Prime PACKTM3封装尺寸的基础上确保模块输出更大的电流。Prime PACKTM3+模块内部增加了一个交流母排和交流输出功率端子,使其电流输出能力提升近30%,且在相比Prime PACKTM3芯片最高允许工作温度增加了25℃的情况下仍可有效地降低模块内部的最高温度水平。IGBT5芯片提高了电流密度,在相同模块封装尺寸下,需优化器件以实现软关断特性和损耗之间的平衡关系,从而降低尖峰关断电压水平,满足在RBSOA区(反向偏压安全工作区)的重复关断电流能力需求。
To take full advantage of the IGBT5’s high junction temperature characteristics, the new generation of Prime PACKTM3 + packages combine the latest XT technology with new design methods to ensure that the module delivers more current while maintaining the size of the Prime PACKTM3 package. The Prime PACKTM3 + module includes an internal AC bus and AC output power terminals that increase current output by nearly 30% and effectively reduce the module’s operating temperature by 25 ° C above the Prime PACKTM3 chip’s operating temperature Internal maximum temperature level. IGBT5 chip to improve the current density, the same module package size, the need to optimize the device to achieve the soft-off characteristics and the balance between the loss, thereby reducing the peak turn-off voltage level to meet the RBSOA area (reverse bias safety work Area) repeat off current capability requirements.