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介绍了1 700 V SiC SBD器件的结构设计、制造工艺、静态特性测试及可靠性摸底试验。通过模拟仿真得到了最佳的漂移区结构和器件结构;针对器件制造工艺中的钝化和金属化两项关键工艺进行原理分析和优化;对器件进行了正向和反向静态参数测试,表明器件耐压水平超过1 700 V,正向电流密度为118 A/cm~2;最后对器件进行了可靠性摸底试验,结果显示20只器件均通过了100个循环的温度冲击试验及168 h的高温反偏试验。
The structure design, manufacturing process, static characteristic test and reliability test of 1 700 V SiC SBD device are introduced. The best drift region structure and device structure are obtained by simulation. The principle and optimization of passivation and metallization in the device manufacturing process are analyzed. The forward and reverse static parameters of the device are tested, The withstand voltage of the device is more than 1 700 V and the forward current density is 118 A / cm 2. Finally, the reliability test of the device is carried out. The results show that all the 20 devices have passed 100 cycles of temperature impact test and 168 h High temperature reverse bias test.