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层状六方氮化硼(h-BN)作为典型的二维材料之一,近年来由于其优良的物理化学特性受到广泛关注,本文利用其横向热导率高、绝缘性能好的特点,将其用于功率芯片表面,作为帮助芯片上局部高热流热点横向散热的绝缘保护层.分别将化学气相沉积法制备的单层h-BN薄膜和微米级h-BN颗粒转移到热测试芯片表面,通过加载不同功率,观察h-BN对芯片散热性能的影响.采用电阻-温度曲线法和红外热像仪两种方法对热测试芯片的热点温度进行检测.研究结果表明,h-BN应用到热测试芯片表面,在加载功率约为1W时,可以将芯片热点温度降低3~5℃,从而提高芯片散热效率,并且通过对比发现单层h-BN薄膜表现出更为理想的散热效果.
As a typical two-dimensional material, layered hexagonal boron nitride (h-BN) has attracted much attention due to its excellent physical and chemical properties in recent years. Based on its high lateral thermal conductivity and good insulation properties, Which is used for the power chip surface as an insulating protective layer for helping the lateral hot spots of the local hot heat flow on the chip.A single layer of h-BN film and micron-sized h-BN film prepared by a chemical vapor deposition method are respectively transferred onto the surface of a thermal testing chip, Load different power to observe the impact of h-BN on the chip thermal performance.With the resistance-temperature curve method and infrared thermal imager two methods to detect the hottest temperature of the thermal test chip.The results show that, h-BN applied to the thermal test The chip surface can reduce the chip hot spot temperature by 3 ~ 5 ℃ when the load power is about 1W, so as to improve the chip cooling efficiency. The comparison shows that the single-layer h-BN film shows a better heat dissipation effect.