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采用电子束蒸发和磁控溅射技术制备了具有红外上转换和光存储特性的电子俘获材料CaS∶Eu ,Sm薄膜 ,利用不同脉宽的超短红外激光测试了它们的红外上转换效率 ,指出CaS∶Eu ,Sm薄膜的红外上转换发光效率不仅与制备工艺及热退火工艺密切相关 ,而且存在“耗尽”现象。薄膜透过率及空间分辨率测试表明 ,尽管膜厚及热退火处理对薄膜的透过率及空间分辨率有影响 ,但它们可显著增加CaS∶Eu ,Sm薄膜的红外上转换发光效率。
The electron-trapping material CaS: Eu, Sm films with infrared up-conversion and optical storage properties were prepared by electron beam evaporation and magnetron sputtering. The infrared up-conversion efficiencies were tested by using ultra-short infrared laser with different pulse widths. : Eu, Sm thin film infrared upconversion luminescence efficiency not only with the preparation process and thermal annealing process are closely related, but also “exhausted” phenomenon. Film transmission and spatial resolution tests show that although film thickness and thermal annealing have an impact on the film transmittance and spatial resolution, they can significantly increase the infrared up-conversion luminescence efficiency of CaS: Eu, Sm films.