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用气相传输平衡技术(VTE)在(0001)蓝宝石衬底上制备了单相的γ-LiAlO2 薄层. X 射线衍射表明, 在适当的温度(1050～1100℃)条件下, 此γ-LiAlO2薄层为高度[100]取向, 并通过扫描电子显微镜和透射光谱, 分析了影响薄膜质量的因素. 这一实验结果意味着有望通过 VTE 技术制备用于 GaN 基器件外延生长的γ-LiAlO2(100)//Al2O3(0001)复合衬底.
Single-phase γ-LiAlO2 thin films were prepared on (0001) sapphire substrates by gas-phase transfer equilibrium technique (VTE). X-ray diffraction showed that the γ-LiAlO2 thin films were thin at the proper temperature (1050 ~ 1100 ℃) (100), and analyzed the factors affecting the film quality by means of scanning electron microscopy and transmission spectroscopy.The experimental results indicate that it is expected to prepare γ-LiAlO2 (100) for epitaxial growth of GaN-based devices by VTE technology, // Al2O3 (0001) composite substrate.