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用XRD测试仪、分光光度计、四探针等测试仪器,探讨了制备气氛、退火温度和退火环境对AZO薄膜光电性能及结构的影响。结果表明:氧气和氩气的体积流量比为2∶1时,薄膜透光率最高(95.33%);退火有利于薄膜结晶;低于400℃退火时,温度越高薄膜电阻越小,超过400℃后,真空中退火温度再升高电阻变化不大,而空气中退火温度再升高电阻反而变大。
The effects of preparation atmosphere, annealing temperature and annealing environment on the photoelectric properties and structure of AZO thin films were investigated by XRD, spectrophotometer and four probes. The results show that when the volume flow ratio of oxygen to argon is 2: 1, the transmittance of the film is the highest (95.33%); the annealing is beneficial to the crystallization of the film; when the annealing temperature is lower than 400 ℃, the film resistance is lower as the temperature is higher than 400 ℃, the annealing temperature in vacuum increases then the resistance does not change much, but in the air the annealing temperature increases but the resistance increases.