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An AlGaN/GaN high-electron mobility transistor(HEMT) with a novel source-connected air-bridge field plate(AFP) is experimentally verified.The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain.When compared to a similar size HEMT device with a conventional field plate(CFP) structure,the AFP not only minimizes the parasitic gate to source capacitance,but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current.In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm,three times higher forward blocking voltage of 375 V was obtained at VGS =-5 V.In contrast,a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process,regardless of device dimensions.Moreover,a temperature coefficient of 0 V/K for the breakdown voltage is observed.However,devices without a field plate(no FP) and with an optimized conventional field plate(CFP) exhibit breakdown voltage temperature coefficients of-0.113 V/K and-0.065 V/K,respectively.
An AlGaN / GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. Device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain.When compared to a similar size HEMT device with a conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at VGS = -5 V. In contrast, a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V / K for the breakdown voltage is observed. Powered, devices without a field plate (no FP) and with an optimized conventio nal field plate (CFP) exhibit breakdown voltage temperature coefficients of-0.113 V / K and-0.065 V / K, respectively.