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应用正硅酸乙酯(TEOS)LPCVD技术实现二氧化硅在SiC晶片表面的淀积,在一定程度上弥补了SiC氧化层过薄和PECVD二氧化硅层过于疏松的弊端。采用TEOS LPCVD技术与高温氧化技术的合理运用,既保证了氧化层介质的致密性和与SiC晶片的粘附能力,又提高了器件的电性能和成品率,同时避免了为获得一定厚度氧化层长时间高温氧化的不足。采用此技术后,SiC芯片的直流成品率得到提高,微波功率器件的对比流片结果显示微波性能也得到了明显的提升,功率增益比原工艺提高了1.5 dB左右,功率附加效率提升了近10%。
The application of TEOS LPCVD technology to deposit silicon dioxide on the surface of SiC wafers compensates for the defects of too thin SiC oxide layer and too loose PECVD silicon dioxide layer to a certain extent. The use of TEOS LPCVD technology and high temperature oxidation technology to ensure the oxide layer of the medium and the adhesion of SiC chip, but also improve the electrical properties and yield of the device, while avoiding the need to obtain a certain thickness of the oxide layer Insufficient oxidation at high temperature for a long time. With this technology, the DC yield of SiC chip is improved. The comparison of microwave power device shows that the microwave performance has also been significantly improved, the power gain is increased by about 1.5 dB compared with the original technology, and the power added efficiency is increased by nearly 10 %.