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本文描述用离子探针显微分析法研究锑化铟器件表面沽污的情况。研究发现:各工艺过程中采用的容器、化学试剂、去离子水及工作环境,都是杂质沽污的主要来源。离子探针显微分析法促进了工艺的改进,使阳极氧化工序的沾污杂质由13种减少到7种,Na、K和Ca杂质的含量也大大下降。中测腐蚀工序沾污杂质由11～13种减少到4～6种。器件表面沾污的减少使器件性能得到改善,φ2mm器件的阻抗由10kΩ提高到60～70kΩ,成品率也提高一倍左右。
This article describes the use of ion-probe microscopy analysis of the surface of indium antimonide device selling the situation. The study found that: the process used containers, chemical reagents, deionized water and working environment, are the main source of impurities sold. Ion probe microanalysis method to promote the improvement of the process, so that the anodic oxidation process contaminated impurities from 13 to 7 species, Na, K and Ca impurity content also dropped significantly. Measured corrosion process contamination impurities from 11 to 13 reduced to 4 to 6 species. Device surface contamination reduced device performance improved, φ2mm device impedance increased from 10kΩ to 60 ~ 70kΩ, the yield also increased about double.