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以共溅射法制备的Cu-In预制膜为衬底材料,以硒粉为原料,尝试了几种特殊的硒化方案,包括单源硒化法、双源硒化法、表面喷粉硒化法、分步硒化退火和同步硒化退火等5种具有代表性和创新性的方案,研究了硒源的摆放方式、升温方法对薄膜质量的影响,比较了不同方法制备的CuInSe2(CIS)薄膜在形貌、成分、相结构等方面的异同.系统地分析了硒化温度、退火温度和退火时间对CuInSe2薄膜成分的影响,研究了各元素的百分含量随硒化退火条件的变化规律,为更准确地把握CIS薄膜的成分和相结构提供有益的借鉴.
Cu-In pre-film prepared by co-sputtering method was used as the substrate material. Selenium powder was used as raw material, and several special selenization schemes were tried, including single source selenization method, dual source selenization method, 5 kinds of representative and innovative schemes such as selenization method, stepwise selenization annealing and synchronous selenization annealing were studied. The influence of the placement of selenium source and the heating method on the film quality was studied. The effects of different methods on the CuInSe2 ( CIS) thin films have been investigated in detail. The effects of selenization temperature, annealing temperature and annealing time on the composition of CuInSe2 thin films have been systematically analyzed. The influence of selenization temperature, annealing temperature and annealing time on the composition of CuInSe2 thin films has been investigated. Variation law, to provide a useful reference for more accurately grasping the composition and phase structure of CIS film.