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采用LP-MOVPE技术,研制出InGaAs/InP双异质结宽接触和质子轰击条形激光器。宽接触室温阈电流密度为1.6kA/cm~2。质子轰击条宽为8μm,腔长为320μm时,室温阈电流为180mA。
Using LP-MOVPE technology, developed InGaAs / InP double heterojunction wide contact and proton bombardment strip laser. Wide contact room temperature threshold current density 1.6kA / cm ~ 2. Proton bombardment strip width of 8μm, cavity length of 320μm, room temperature threshold current 180mA.