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针对半导体激光器电磁波的振幅较大,激光器中能量的透射率较高,导致半导体激光器的能量损耗越大,对半导体激光器功率有一定的影响。本文提出腔面镀膜对半导体激光器功率影响分析方法,通过对激光产生过程中粒子转化过程进行优化,降低电磁波的振幅,并对腔面未镀膜时半导体激光器的能量反射率和透射率进行计算,从而确定未镀膜半导体激光器的输出功率,然后根据激光器的电磁波电场和磁场的强度,确定镀膜后腔面的反射因子和透射因子,减少能量损耗,计算出镀膜后激光器的反射率和透射率,得出镀膜后激光器的功率,以镀膜前后半导体激光器的功率值为依据,实现高功率半导体激光器腔面镀膜对功率影响分析。实验结果表明,所提方法能够对镀膜前后功率变化进行准确分析,为半导体激光器腔面镀膜提供理论依据。
Due to the large amplitude of the electromagnetic wave in the semiconductor laser and the high energy transmission in the laser, the larger the energy loss of the semiconductor laser is, the more the power of the semiconductor laser is affected. In this paper, the method of analyzing the influence of cavity surface coating on the power of semiconductor laser is proposed. By optimizing the particle transformation process during laser generation, the amplitude of electromagnetic wave is reduced and the energy reflectivity and transmittance of the semiconductor laser are calculated. The output power of the uncoated semiconductor laser is determined, and then the reflection and transmission factors of the coated cavity surface are determined according to the electromagnetic field and magnetic field of the laser to reduce the energy loss and calculate the reflectance and transmittance of the laser after coating. The power of the laser after the coating is based on the power of the semiconductor laser before and after coating to realize the power influence analysis on the surface coating of the high power semiconductor laser. The experimental results show that the proposed method can accurately analyze the power changes before and after coating and provide the theoretical basis for the coating of the cavity surface of the semiconductor laser.