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本文主要研究不同结构工艺参数的电力半导体器件,其体内扩散电流、空间电荷区复合电流、势垒电容、扩散电容、渡越电容诸物理量对正向电压衰减曲线尾部的影响及其变化规律。为进一步研究衰减曲线的变化规律和测试电力半导体器件在不同注入水平下的载流子寿命值,提供了理论依据。
In this paper, we mainly study the influence of the physical quantities of various structural parameters on the tail of forward voltage decay curve and the variation rules of the power semiconductor devices, the diffusion current in the body, the compound current in the space charge region, the barrier capacitance, the diffusion capacitance and the crossover capacitance. In order to further study the variation law of attenuation curve and test the value of carrier lifetime of power semiconductor devices at different implantation levels, the theoretical basis is provided.