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用液相外延(LPE)法在InAs衬底上生长了3～7μm波段的InAs1-ySby外延层,研究了外延多层的组份与禁带宽度和晶格常数的关系。用光学显微镜、傅立叶变换红外(FTIR)透射、光荧光(PL)谱测试以及偏振光椭圆仪研究了外延材料的光学特性。电学性质是将计算值与实测有效霍尔(Hall)参数的厚度关系拟合得到的。结果表明,本文生长的材料在中红外光伏型探测器上具有良好的应用前景。
The InAs1-ySby epitaxial layer of 3 ~ 7μm band was grown on InAs substrate by liquid phase epitaxy (LPE) method. The relationship between the composition of the epitaxial multilayer and the forbidden band width and the lattice constant was studied. The optical properties of the epitaxial materials were investigated by optical microscopy, Fourier transform infrared (FTIR) transmission, fluorescence (PL) spectroscopy and polarization ellipsometry. The electrical properties are calculated by fitting the calculated values to the thickness of the measured Hall parameter. The results show that the material grown in this paper has a good application prospect in the mid-infrared photovoltaic detector.