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从载流子在 MOS结构反型层内的经典分布和量子化后的子带结构出发 ,提出了经典的和量子化的表面有效态密度 (SL EDOS:Surface layer effective density- of- states)的概念。利用表面有效态密度的概念建立了经典理论框架和量子力学框架内的电荷分布模型。该模型包含了强反型区表面电势的变化对载流子浓度的影响 ,具有很高的计算效率和稳定性。在模型基础上 ,研究了量子化效应对反型层载流子浓度和表面电势的影响。
Starting from the classical distribution of carriers in the inversion layer of the MOS structure and the quantization of the sub-band structure, a classical and quantum-effective surface-area effective density-of-states concept. The concept of the effective surface density of states is used to establish the charge distribution model in classical theoretical framework and quantum mechanics framework. The model includes the influence of the change of the surface potential of the strong inversion region on the carrier concentration, and has high computational efficiency and stability. Based on the model, the effects of quantization on the carrier concentration and surface potential in the inversion layer are investigated.