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描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。采用金箔散射法可以降低加速器质子束流五六个量级 ,从而满足半导体器件质子单粒子效应的要求。研制的弱流质子束流测量系统和建立的注量均匀性测量方法解决了质子注量的准确测量问题。提高了存储器单粒子效应长线测量系统的性能 ,保证了翻转数的准确测量。实验测得静态随机存取存储器质子单粒子翻转截面为 1 0 - 1 4 cm2 / bit量级 ,随质子能量的增大略有增大。并对观察到的单个位的硬错误及器件功能失效现象给予了合理的解释
An experimental method for measuring proton single-element inversion cross sections of static random access memory is described. Gold foil scattering method can reduce the accelerator proton beam five or six orders of magnitude to meet the semiconductor proton single-particle effect requirements. The developed weak-flow proton beam measurement system and the established fluence measurement method solve the problem of accurate measurement of proton fluence. Improve the memory single-particle effect long-term measurement system performance, to ensure the accurate measurement of the number of flip. The experimental results show that the proton single - element inversion cross section of the SRAM is 10 ~ 14 cm2 / bit, which increases slightly with the increase of proton energy. And gave a reasonable explanation for the observed single-bit hard errors and device failure