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In order to increase collection efficiency and eliminate image lag,multi n-type implants were introduced into the process of a pinned-photodiode.For the purpose of improving the collection efficiency, multi n-type implants with different implant energies were proposed,which expanded the vertical collection region. To reduce the image lag,a horizontal gradient doping concentration eliminating the potential barrier waalso formed by multi n-type implants.The simulation result shows that the collection efficiency can be improved by about 10%in the long wavelength range and the density of the residual charge is reduced from 2.59×10~9 to 2.62×10~7 cm~(-3).
In order to increase collection efficiency and eliminate image lag, multi n-type implants were introduced into the process of a pinned-photodiode. For the purpose of improving the collection efficiency, multi n-type implants with different implant energies were proposed, which expanded the vertical collection region. To reduce the image lag, a horizontal gradient doping concentrations eliminate the potential barrier waalso formed by multi n-type implants. The simulation result shows that the collection efficiency can be improved by about 10% in the long wavelength range and the density of the residual charge is reduced from 2.59 × 10 ~ 9 to 2.62 × 10 ~ 7 cm ~ (-3).