英特尔公司宣布制造出基于65纳米技术(下一代半导体批量制造工艺)的全功能SRAM(静态随机存储器)芯片。这种65纳米制程融合了高性能、低功耗晶体管、第二代英特尔应变硅、高速铜互连以及低K电介质材料。采用65纳米制程生产芯片能够将当前单 Intel Corporation announced the creation of a fully functional SRAM (Static Random Access Memory) chip based on 65nm technology, the next-generation semiconductor bulk manufacturing process. This 65nm process combines high performance, low power transistors, second generation Intel strained silicon, high speed copper interconnect, and low K dielectric materials. 65-nanometer process chip production to be the current single