用简并激发 -探测技术研究了 77K温度下 In As/Ga As量子点中载流子快速俘获和弛豫过程 .在瞬态反射谱测量中 ,除观察到与 Ga As有关的驰豫过程外 (时间常数约为 lps) ,还观察到一个时间常数为几个至 2 0 ps的反射率上升过程 .提出了一个物理模型 ,表明上述上升过程与光致载流子被 In As层快速俘获过程有关 ,并由此得到载流子的俘获时间 ,俘获时间随载流子浓度增加而减小 . The fast trapping and relaxation of carriers in the InAs / GaAs quantum dots at 77K were investigated by degenerate excitation-detection technique. In addition to the GaAs-related relaxation process observed in transient reflection spectroscopy, (With a time constant of about 1 ps), a reflectivity rise of several ps to ps is also observed, and a physical model is proposed to show that the ascending process is similar to the rapid trapping of photo-carriers by the InAs layer , And thus the carrier capture time, the capture time decreases with increasing carrier concentration.