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采用直流磁控溅射法制备了掺钨氧化铟(IWO)透明导电薄膜。研究了薄膜结构、表面形貌、光学和电学性能与各种制备参数之间的依赖关系。X射线衍射(XRD)谱分析结果表明随着基底温度的升高,薄膜的结晶性得到改善。原子力显微镜(AFM)测试结果表明薄膜颗粒均匀,表面平整。研究发现薄膜的电学性能对制备参数非常敏感。在基板温度为380℃的条件下所制备的样品在可见光区域(400~700 nm)的平均透射率(未扣除基底)均大于80%。获得的IWO薄膜最低电阻率为2.8×10-4 ohm.cm,对应载流子迁移率49 cm2V-1s-1,载流子浓度4.4×1020 cm-3,平均透射率83%。
Tungsten-doped indium oxide (IWO) transparent conductive films were prepared by DC magnetron sputtering. The dependence of film structure, surface morphology, optical and electrical properties on various fabrication parameters was investigated. The results of X-ray diffraction (XRD) analysis show that the crystallinity of the films is improved with the increase of substrate temperature. Atomic force microscopy (AFM) test results show that the film particles are uniform, the surface smooth. The study found that the electrical properties of the film are very sensitive to the preparation parameters. The average transmittance in the visible region (400-700 nm) of the prepared samples with the substrate temperature of 380 ℃ (without the substrate) is more than 80%. The lowest resistivity of the obtained IWO film was 2.8 × 10-4 ohm.cm, the carrier mobility was 49 cm2V-1s-1, the carrier concentration was 4.4 × 1020 cm-3, and the average transmittance was 83%.