Interface reaction (IR) is a frequently observed phenomenon in the study of advanced thin film materials. It is very important to study the reaction conditions at which IR happens and then to suppress or make use of it, the necessary conditions, including both thermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems, including oxide/silicon, oxide/metal, metal/metal, metal/semiconductor and semiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were also introduced. Interface reaction (IR) is a frequently observed phenomenon in the study of advanced thin film materials. It is very important to study the reaction conditions at which IR happens and then to suppress or make use of it, the necessary conditions, including both thermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems, including oxide / silicon, oxide / metal, metal / metal, metal / semiconductor and semiconductor / semiconductor, were reviewed. Methods to suppress and make use of IR were also introduced.