【摘 要】
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Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. F
【机 构】
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Department of Microelectronics, Fudan University, Shanghai 200433
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Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10-9 A/cm2 at 1.8 V and 125℃, a breakdown electric field of 2.6 MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present,suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.
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