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用射频磁控溅射在单晶硅上沉积Si1-x Gex薄膜。溅射的SiGe薄膜样品,用俄歇电子谱(AES)测定其Ge含量,约为17%,即Si0.83Ge0.17。样品分别做高温磷、硼扩散,经XRD测试为多晶态,制得n,p-poly-Si0.83Ge0.17。在n-poly-Si0.83Ge0.17上分别溅射Ni、V、W、Cu、Pt、Ti、Al、Co膜,做成金属/n-poly-Si0.83Ge0.17肖特基结。利用I-V测试数据进行接触参数的提取,从而定量研究金属的功函数、金属膜厚以及快热退火温度对肖特基接触特性的影响。结果发现,肖特基势垒高度(SBH)与金属的功函数有微弱的正相关,Al/n,p-poly-Si0.83Ge0.17接触存在Shannon效应,金属膜厚对Co/n,p-poly-Si0.83Ge0.17接触特性有不同的影响,随快热退火温度的升高,Ni、V、W、Co、Cu、Pt、Ti、Al八种金属在n-poly-Si0.83Ge0.17上的肖特基势垒高度和理想因子未见有一致的变化规律,但存在不均匀性。
Si1-x Gex thin films were deposited on single-crystal Si by RF magnetron sputtering. The sputtered SiGe film sample has a Ge content of about 17% as determined by Auger electron spectroscopy (AES), that is, Si0.83Ge0.17. Samples were made of high-temperature phosphorus, boron diffusion, the XRD test for the polymorphic, prepared n, p-poly-Si0.83Ge0.17. Ni, V, W, Cu, Pt, Ti, Al and Co films were sputtered on n-poly-Si0.83Ge0.17 to form a metal / n-poly-Si0.83Ge0.17 Schottky junction. I-V test data were used to extract the contact parameters to quantitatively study the effect of metal work function, metal film thickness and rapid thermal annealing temperature on Schottky contact characteristics. The results show that Schottky barrier height (SBH) has a weak positive correlation with the work function of metal, and the Shannon effect exists in the contact of Al / n, p-poly-Si0.83Ge0.17. -poly-Si0.83Ge0.17 have different effects on the contact characteristics, with the rapid thermal annealing temperature, Ni, V, W, Co, Cu, Pt, Ti, Al eight kinds of metal in the n-poly-Si0.83Ge0 .17 Schottky barrier height and ideality factor did not see consistent changes in the law, but there is uneven.