以SnCl4·5H2O和NH4F为原料,采用喷雾热分解的方法在片状日用玻璃基材和石英玻璃基材上制得了掺氟氧化锡透明导电薄膜。采用X射线衍射仪(XRD)和扫描电镜(SEM)分别对薄膜的内部结构和表面形貌进行了表征。研究了F-的掺杂量、喷涂温度、沉积时间和热处理对薄膜方阻R□的影响。实验结果表明,当犤NH4F犦/犤SnCl4·5H2O犦=32wt%、成膜温度为450℃、喷涂时间为15s时,可使所得薄膜的方阻R□达最低,为10Ω/□。 Using SnCl4 · 5H2O and NH4F as raw materials, a fluorine-doped tin oxide transparent conductive film was prepared on the flaky daily-use glass substrate and the quartz glass substrate by spray pyrolysis. The internal structure and surface morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effects of F- content, spraying temperature, deposition time and heat treatment on the square resistance R □ were studied. The experimental results show that the square resistance R 所 of the obtained film can be as low as 10Ω / 当 when the NH4F 犦 / 犤 SnCl4 · 5H2O 犦 = 32wt%, the film forming temperature is 450 ℃ and the spraying time is 15s.