用平面波展开法对GaN/Al_xGa_(1-x)N球形量子点中类氢杂质态能级随量子点半径、Al组分以及结合能随Al组分的变化规律进行了详细讨论.计算了量子点内外有效质量差异对杂质态能级和结合能的修正,结果表明对于Al组分较高的GaN/Al_xGa_(1-x)N球形量子点,电子有效质量差异对杂质能级和结合能的修正不能忽略.考虑电子有效质量差异后,进一步具体计算了杂质结合能随量子点半径、杂质位置以及外电场的变化规律. The energy levels of hydrogen-like impurities in GaN / Al_xGa_ (1-x) N quantum dots with the radius of the quantum dots, the change of Al composition and the binding energy with Al composition are discussed in detail by the plane wave expansion method. The results show that for the GaN / Al_xGa_ (1-x) N spherical quantum dots with high Al content, the difference of the effective electron mass between the effective impurity level and the binding energy The correction can not be neglected.According to the difference of effective electron mass, the variation law of impurity binding energy with the radius of quantum dot, the position of impurity and the external electric field are calculated further.