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在百焦耳准分子激光实验中，采用了径向绝缘的大面积强流相对论电子束二极管（简称ＲＥＢ二极管）。对“天光一号”的ＰＦＬ线、有机玻璃隔板以及二极管腔内区域进行了二维轴对称电场计算，得到了直观的等位线图和电场分布图。结合二极管实验对计算结果进行了分析，用耐压因子概念解释沿面滑闪问题。另外，对一台焦耳级准分子激光加速器的二极管进行了优化电场设计。进行了有关改善三结合处电场分布的实验研究，给出三结合处电场强度在小于３ｋＶ／ｃｍ时，不会发生真空沿面击穿的结论。
In the 100 Joule excimer laser experiment, a large-area intense-current relativistic electron beam diode (REB diode) with radial insulation is used. The two-dimensional axisymmetric electric field was calculated for the PFL line, the plexiglass separator plate and the diode cavity area of the “Tian Guang I”, and the visual equipotential curve and the electric field distribution chart were obtained. Combining with the diode experiment, the calculation results are analyzed, and the creeping problem along the surface is explained by the concept of pressure resistance factor. In addition, the diode of a Joule-level excimer laser accelerator was optimized for electric field design. The experimental research on improving the electric field distribution at the three junctions was carried out. It is concluded that the vacuum interfacial breakdown does not occur when the electric field strength of the three junctions is less than 3kV / cm.