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采用共沉淀工艺制备了不同Cu含量的Bi-2212前驱体粉末,并通过分步烧结工艺对前驱体粉末中不同Cu含量所引起的相演变过程的变化进行了系统分析。结合浸涂法和粉末装管法制备了Bi-2212厚膜及单芯线材。结果表明,Cu含量的变化对厚膜和带材在烧结过程中的相演变过程同样具有极大的影响。随着Cu含量的增加,体系的相演化过程发生了改变。最终材料中Bi-2201相的含量逐渐减少,而AEC相的含量逐渐增加。考虑到Bi-2201和AEC对载流过程的影响各不相同,通过系统的优化,获得了最佳Cu含量为x=2.2。在这一成分处,厚膜和单芯带材临界电流密度同时达到最大值。
Bi-2212 precursor powders with different contents of Cu were prepared by coprecipitation process, and the changes of phase evolution caused by different Cu contents in the precursor powders were systematically analyzed through the step-by-step sintering process. Bi-2212 thick film and single-core wire were prepared by dip-coating method and powder tube method. The results show that the variation of Cu content has the same great influence on the phase transformation of thick films and strips during the sintering process. With the increase of Cu content, the phase evolution of the system has changed. The content of Bi-2201 phase in the final material gradually decreased, while the content of AEC phase increased gradually. Considering that Bi-2201 and AEC have different influences on the current-carrying process, the optimum Cu content is x = 2.2 through systematic optimization. At this component, the critical current densities for thick films and single-core tapes reach their maximum simultaneously.