论文部分内容阅读
以正向电压为自变量,以正向电流的对数为应变量,以温度为参数得到的p-n结的I-V-(T)特性曲线在第一象限中近似汇聚于一点.汇聚点对应的电压近似等于半导体材料的禁带宽度.汇聚点可以用来获取任意温度下的I-V特性曲线.
Taking the forward voltage as the independent variable and the logarithm of the forward current as the dependent variable, the IV- (T) characteristic curve of the pn junction obtained from the temperature is converged to a point approximately in the first quadrant. The voltage corresponding to the convergence point Approximately equal to the forbidden band width of the semiconductor material. The convergence point can be used to obtain the IV characteristic curve at any temperature.