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本文用束传播方法（ＢＰＭ）设计了具有弯曲波导吸收区结构１．３μｍＩｎＧａＡｓＰ／ＩｎＰ超辐射发光二极管（ＳＬＤ），分析了不同吸收区长度Ｌａ和弯曲的曲率半径Ｒ对ＳＬＤ特性的影响，给出了直观的结果，并进行了优化设计。在假定吸收区后端面反射率为１，和忽略吸收区内的吸收损耗的条件下，取ｄ＝０．２μｍ，ｗ＝２μｍ，Ｌｐ＝４００μｍ，Ｌａ＝２００μｍ，Ｒ＝５００μｍ，Ｉ＝２００ｍＡ，经吸收区反射耦合回有源区内的光与有源区前端面入射光的强度比率仅为９．５×１０－３。
In this paper, a 1.3μm InGaAsP / InP superluminescent diode (SLD) with curved waveguide absorption region structure was designed by using the beam propagation method (BPM). The effect of different absorption region lengths La and curvature radius of curvature R on the SLD characteristics was given. Intuitive results, and optimized design. D = 0.2 μm, w = 2 μm, Lp = 400 μm, La = 200 μm, R = 500 μm, I = 200 mA assuming that the rear facet reflectance is 1 and the absorption loss in the absorption region is neglected, The intensity ratio of the light reflected by the absorption area back to the active area and the light incident on the front end of the active area is only 9.5 × 10 -3.