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以金属有机物化学气相沉积(MOCVD)设备生长的4片蓝宝石衬底氮化镓基发光二极管(LED)外延片为样品,对氮化镓基LED的发光性能的影响因素进行了对比分析.采用场发射扫描电子显微镜(FSEM)观测湿法腐蚀前后的样品表面缺陷形貌,用X射线衍射(XRD)检测样品的晶体质量,通过室温光致荧光光谱(RT-PL)及光学积分球对样品的发光特性进行了测量和分析.结果表明:结构设计对提高LED发光性能的影响大于晶体质量的影响,优化LED光学、电学结构是提高氮化镓基LED发光性能的关键手段.
Four sapphire substrate GaN epitaxial wafers grown by metal organic chemical vapor deposition (MOCVD) device were used as samples to analyze the influencing factors on the luminescent properties of gallium nitride based LEDs. The surface morphology of the samples before and after wet etching was observed by emission scanning electron microscopy (FSEM). The crystal quality of the samples was examined by X-ray diffraction (XRD). The crystallites of the samples were characterized by RT-PL and optical integrating sphere The results show that the influence of the structural design on the LED luminescence performance is greater than that of the crystal quality, and the optimization of the LED optical and electrical structures is the key means to improve the luminescence performance of the gallium nitride based LED.